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rf & protection devices data sheet revision 3.0, 2013-09-10 BGT24ATR11 silicon germanium 24 ghz transceiver mmic
edition 2013-09-10 published by infineon technologies ag 81726 munich, germany ? 2013 infineon technologies ag all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infine on technologies hereby disclaims any and all warranties and liabilities of any kind, including witho ut limitation, warranties of non-infrin gement of intellectua l property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies compon ents may be used in life-su pport devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safe ty or effectiveness of that de vice or system. life support devices or systems are intended to be implanted in the hu man body or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
BGT24ATR11 silicon germanium 24 ghz transceiver mmic data sheet 3 revision 3.0, 2013-09-10 trademarks of infineon technologies ag aurix?, bluemoon?, c166?, ca npak?, cipos?, cipurse?, comn eon?, econopack?, coolmos?, coolset?, corecontrol?, crossave?, dave?, easypim?, econobri dge?, econodual?, econopim?, eicedriver?, eupec?, fcos?, hitfe t?, hybridpack?, i2rf?, isoface?, isopack?, mipaq?, modstack?, my-d?, novalithic?, omnitune?, optimos?, origa?, primarion?, primepack?, primestack?, pr o-sil?, profet?, rasic?, re versave?, satric?, sieget?, sindrion?, sipmos?, smarti?, smartlew is?, solid flash?, tempfet?, thinq!?, trenchstop?, tricore?, x-go ld?, x-pmu?, xmm?, xposys?. other trademarks advance design system? (ads) of agilent te chnologies, amba?, arm?, multi-ice?, keil?, primecell?, realview?, thumb?, vision? of arm limited, uk. autosar? is licensed by autosar development partnership. bluetooth? of bluetooth sig inc. cat-iq? of dect forum. colossus?, firstgps? of trimble navigation ltd. emv? of emvc o, llc (visa holdings in c.). epcos? of epcos ag. flexgo? of microsoft corp oration. flexray? is licensed by flexray consortium. hyperterminal? of hilgraeve incorporated. iec? of commission electrot echnique internationale. irda? of infrared data association corporation. iso? of international organization for standardization. matlab? of mathworks, inc. maxim? of maxim integrated products, inc. microtec?, nucleus? of mentor graphics corporation. mifare? of nx p. mipi? of mipi alliance, inc. mips? of mips technologies, inc., usa. murata? of murata manufacturing co., microwave offi ce? (mwo) of applied wave research inc., omnivision? of omnivision technologies, inc. open wave? openwave systems inc. red hat? red hat, inc. rfmd? rf micro devices, inc. sirius? of sirius sate llite radio inc. solaris? of sun microsystems, inc. spansion? of spansion llc ltd. symbian? of sy mbian software limited. taiyo yuden? of taiyo yuden co. teaklite? of ceva, inc. t ektronix? of tektroni x inc. toko? of toko kabushiki kaisha ta. unix? of x/open company limited. verilog?, palladium? of cadence design systems, inc. vlynq? of texas instruments inco rporated. vxworks?, wind river? of wind river systems, inc. zetex? of diodes zetex limited. last trademarks update 2010-10-26 BGT24ATR11 silicon germanium 24 ghz transceiver mmic revision history: 2013-09-10, revision 3.0 previous revision: 2012-02-08, revision 2.4 page subjects (major cha nges since last revision) all update parameter
BGT24ATR11 silicon germanium 24 ghz transceiver mmic table of contents data sheet 4 revision 3.0, 2013-09-10 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 list of figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 list of tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.1 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.2 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2.3 esd integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2.4 measured rf characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2.4.1 power supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2.4.2 tx section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2.4.3 rx section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2.5 temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2.6 power detector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 3 application circuit and block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 3.1 application circuit schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 3.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 3.3 spi . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 3.4 application board and reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 3.5 equivalent circuit diagram of mmic interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 4 physical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 4.1 package footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 4.2 reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 4.3 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 table of contents
BGT24ATR11 silicon germanium 24 ghz transceiver mmic list of figures data sheet 5 revision 3.0, 2013-09-10 figure 1 BGT24ATR11 block diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 figure 2 vco tuning window . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 figure 3 application circuit with chip outlin e (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 figure 4 timing diagram of the spi . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 figure 5 cross-section view of application board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 figure 6 detail of compensation structure (valid for a ppl. board mat. ro4350b, 0.254mm acc. to fig. 5) . 21 figure 7 application board layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 figure 8 equivalent circuit diagram of mmic interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 figure 9 recommended footprint and stenc il layout for the vqfn32-9 package . . . . . . . . . . . . . . . . . . . 24 figure 10 reflow profile for BGT24ATR11 (vqfn32-9) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 figure 11 package outline (top, side and bo ttom view) of vqfn32-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 figure 12 marking layout vqfn32-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 figure 13 tape of vqfn32-9 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 list of figures
BGT24ATR11 silicon germanium 24 ghz transceiver mmic list of tables data sheet 6 revision 3.0, 2013-09-10 table 1 absolute maximum ra tings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 table 2 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 table 3 esd integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 table 4 typical characteristics t a = -40 .. 125 c, spi-bit 4 = high . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 table 5 typical characteristics t a = -40 .. 125 c, f = 24.0 .. 24.25 ghz, spi-bit 4 = high . . . . . . . . . . . . 11 table 6 typical characteristics t a = -40 .. 125 c, f = 24.0 .. 24.25 ghz, spi-bit 4 = high . . . . . . . . . . . . 12 table 7 typical characteristics t a = -40 .. 125 c, f = 24.0 .. 24.25 ghz, spi-bit 4 = high . . . . . . . . . . . . 14 table 8 typical characteristics temperature sensor t a = -40 .. 125 c . . . . . . . . . . . . . . . . . . . . . . . . . 15 table 9 typical characteristics power detector t a = -40 .. 125 c, v cc = 3.3 v . . . . . . . . . . . . . . . . . . . 15 table 10 bill of materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 table 11 pin definition and function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 table 12 spi data bit description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 table 13 spi timing and logic levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 table 14 truth table amux . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 list of tables
product name package chip marking BGT24ATR11 vqfn32-9 t1524 BGT24ATR11 silicon germanium 24 ghz transceiver mmic BGT24ATR11 data sheet 7 revision 3.0, 2013-09-10 1 features ? 24 ghz ism band transceiver mmic ? qualified according aec-q100 ? fully integrated low phase noise vco ? switchable prescaler with 1.5 ghz and 23 khz output ? on chip power and temperature sensors ? gilbert based homodyne quadrature receiver ? single ended rf and lo terminals ? low noise figure nf ssb : 12 db ? high conversion gain: 26 db ? high 1 db input compression point: -12 dbm ? single supply voltage 3.3 v ? low power consumption 500 mw ? 200 ghz bipolar sige:c technology b7hf200 ? fully esd protected device ? vqfn-32-9 leadless plastic package incl. lti feature ? pb-free (rohs compliant) package description the BGT24ATR11 is a silicon germaniu m mmic for signal generatio n and reception, operati ng in the 24 ghz ism band from 24.0 0 to 24.25 ghz. it is based on a 24 ghz fundamental voltage controlled oscillator. switchable frequency prescalers are included with output frequencie s of 1.5 ghz and 23 khz. the main rf output delivers typ. 11dbm signal power to feed an antenna and an auxiliary lo output is ava ilable to provide lo signal to separate receiver components. a lna provides low noise figure and a rc polyphase filter (ppf) is used for lo quadrature phase generation of the homodyne quadrature downconversion mixer. output power sensors as well as a temperature sensor are implemented for monitoring purposes. the device is cont rolled via spi and is manufactured in a 0.18m sige:c technology offering a cutoff frequency of 200 ghz. the mmic is packaged in a 32 pin leadless rohs compliant vqfn package.
BGT24ATR11 silicon germanium 24 ghz transceiver mmic features data sheet 8 revision 3.0, 2013-09-10 figure 1 BGT24ATR11 block diagram BGT24ATR11_chip_bid.vsd spi buffer /16 tx pa /65536 3 tx power sensor temp. sensor ppf* lna ifi ifq 90 0 rfin lo buffer mpa ifqx ifix * poly phase filter fine coarse q1 q1n q2 si cs clk lo power sensor amux 2 2 temp ana vcctemp txoff txx lo
BGT24ATR11 silicon germanium 24 ghz transceiver mmic electrical characteristics data sheet 9 revision 3.0, 2013-09-10 2 electrical characteristics 2.1 absolute maximum ratings t a = -40 c to 125 c; all voltages with respect to grou nd, positive current flowing into pin (unless otherwise specified) 1) 1) not subject to production test, specified by design table 1 absolute maximum ratings parameter symbol values unit note / test condition min. typ. max. supply voltage v cc / v cctemp -0.3 ? 3.6 v ? dc voltage at rf pins tx, txx, lo, rfin1, rfin2 vdc rf 0 ? 0 v mmic provides short circuit to gnd for all rf pins dc voltage at pins ifi, ifix, ifq, ifqx vdc if 0?vccv? dc current into pins ifi, ifix, ifq, ifqx i if -8.5 ? 3.5 ma max. values indicate current due to short circuit to gnd and vcc resp. dc voltage at pin ana vdc ana -0.3 ? 3.6 v ? dc current into pin ana (sink) i ana sink 125 350 500 a max. values indicate current due to short circuit to gnd and vcc resp. dc current into pin ana (source) i ana source -7??ma? dc current into pin vcctemp i vcctemp ? ? 3.5 ma max. values indicate current due to short circuit to gnd and vcc resp. dc voltage at pin temp vdc temp 0?vccv? dc current into pin temp i temp -1 ? 1.5 ma max. values indicate current due to short circuit to gnd and vcc resp. dc voltage at pins q1, q1n vdc q1x vcc-0.3 ? vcc v ? dc current into pins q1, q1n i q1x -8 ? 12 ma ? dc voltage at pin q2 vdc q2 -0.3 ? 3.6 v ? dc current into pin q2 enabled i q2en -3?3ma? dc current into pin q2 disabled i q2dis -10 ? 10 a ? dc voltage at spi input pins si, clk, cs vdc spiin -0.3 ? 3.6 v ? dc current into spi input pins si, clk, cs i spiin ??3ma? rf input power into pin rfin p rf ??0dbm?
BGT24ATR11 silicon germanium 24 ghz transceiver mmic electrical characteristics data sheet 10 revision 3.0, 2013-09-10 attention: stresses exceeding the max. values listed here may cause permanent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 2.2 thermal resistance 2.3 esd integrity dc voltage at pins fine, coarse v f , v c 0?5v? dc current into pins fine, coarse i f , i c -110 ? 110 a positive currents if v tune > v cc ; negative currents if 0v v f ,v c vcc dc voltage at pin txoff vdc txoff -0.3 ? 3.6 v ? total power dissipation p diss ? ? 750 mw with bist deactivated junction temperature t j -40 ? 155 c ? ambient temperature range t a -40 ? 125 c t a = temperature at package soldering point storage temperature range t stg -40 ? 150 c ? table 2 thermal resistance parameter symbol values unit note / test condition min. typ. max. junction - soldering point 1) 1) for calculation of r thja please refer to application note thermal resistance r thjs ??40k/w? table 3 esd integrity parameter symbol values unit note / test condition min. typ. max. esd robustness, hbm 1) 1) according to ansi/esda/jedec js-001 (r = 1.5k , c = 100pf) for electrostatic discharge sensitivity testing, human body model (hbm)-component level v esd-hbm -1 ? 1 kv all pins esd robustness, cdm 2) 2) according to jedec jesd22-c101 field-induced charged device model (cdm), test method for electrostatic-discharge- withstand thresholds of microelectronic components v esd-cdm -500 ? 500 v all pins table 1 absolute maximum ratings (cont?d) parameter symbol values unit note / test condition min. typ. max.
BGT24ATR11 silicon germanium 24 ghz transceiver mmic electrical characteristics data sheet 11 revision 3.0, 2013-09-10 2.4 measured rf characteristics 2.4.1 power supply 2.4.2 tx section table 4 typical characteristics t a = -40 .. 125 c, spi-bit 4 = high parameter symbol values unit note / test condition min. typ. max. supply voltage v cc 3.135 3.3 3.465 v ? supply current i cc 110 150 190 ma ? supply voltage temperature sensor v cctemp 3.135 3.3 3.465 v ? supply current temperature sensor i cctemp 1.3 2.2 3 ma ? table 5 typical characteristics t a = -40 .. 125 c, f = 24.0 .. 24.25 ghz, spi-bit 4 = high 1) 1) performance based on application circuit figure 3 on pa ge 16, cross section of app lication board, compensation structures and application board layout figur e 5 on page 21ff and footprint figure 9 on page 24 parameter symbol values unit note / test condition min. typ. max. vco frequency range f vco 24.0 ? 24.25 ghz ? vco fine tuning voltage 2) v f 0.8 3) ? 3.0 v 0.8v v f 1.25v for v cmin =0.75v, 1.25v v f 3.0v for v cmin =0.75v+1.7v*( v f -1.25v)/1.75v, see figure 2 on page 12 vco coarse tuning voltage 2) v c 0.75 3) ?3.0v 0.75v v c 1.35v for v fmin =0.8v, 1.35v v c 3.0v for v fmin =v c -0.55v, see figure 2 on page 12 vco tuning slope fine f/ v f 200 ? 1000 mhz/v 24ghz f 24.25ghz see figure 2 on page 12 vco tuning slope coarse f/ v c 400 ? 2000 mhz/v 24ghz f 24.25ghz see figure 2 on page 12 vco temperature drift f/ t -10 -6 0 mhz/k min @ t = -40c vco pushing f/ v cc -350 60 350 mhz/v absolute values
BGT24ATR11 silicon germanium 24 ghz transceiver mmic electrical characteristics data sheet 12 revision 3.0, 2013-09-10 figure 2 vco tuning window 2) at tuning pins chipinternal pull-up of 60k 20% to vcc; max.- and min. temperature tuning voltage limits are chosen in a way that they can be linearly interp olated within operatin g temperature range 3) specified min. value for temperature 25c; min. value for temperatures >25c is based on following formular v cmin = v fmin = 0.8v + 0.4v * (t [c] - 25c) / 100c table 6 typical characteristics t a = -40 .. 125 c, f = 24.0 .. 24.25 ghz, spi-bit 4 = high 1) parameter symbol values unit note / test condition min. typ. max. vco phase noise p n ? -85 -75 dbc/hz @ 100khz offset, v f = v c tx/txx load impedance z tx z txx ? 19.8-j20.9 18-j17.3 ? typical value at 24.125ghz and vswr 2:1 max. tx output power p tx 61115dbm? max. tx output power for v cc = 3.3v 50mv p tx 6.5 11 14.5 dbm ? tx ouput power adjustable range a tx 3 9 ? db adjustable via spi tx output power in ?off? mode 2) p txoff ? ? -30 dbm parameter based on ifx eval board design BGT24ATR11_vco_char.vsd v c /v v f /v 1 2 3 1 2 3 0,75 0,8 2,45 2,45 1,25 1,35
BGT24ATR11 silicon germanium 24 ghz transceiver mmic electrical characteristics data sheet 13 revision 3.0, 2013-09-10 lo load impedance z lo ? 24.4-j25.8 ? typical value at 24.125ghz and vswr 2:1 lo output power 3) p lo -8 0 6 dbm spi-bit 4 = high q1 prescaler division ratio d q1 ?2 4 ??? q1 prescaler output power p q1 -13 -9 -5 dbm q1 loaded with 100 ohm (ac- coupled) q1 load impedance z q1 ?100? ? q2 prescaler division ratio d q2 ?2 20 ??? q2 prescaler max. output voltage v maxq2 2.4 ? ? v test condition: q2 loaded with high impedance probe (1 mohm,13 pf) q2 prescaler min. output voltage v minq2 ? ? 0.8 v test condition: q2 loaded with high impedance probe (1 mohm, 13 pf) q2 prescaler max. output source current i maxsource q2 1.2 ? ? ma test condition: q2 loaded with 50 ohm to vcc q2 prescaler max. output sink current i maxsink q2 1.2 ? ? ma test condition: q2 loaded with 50 ohm to vcc q2 prescaler output resistance in disable mode r q2,dis 100 ? ? k ? voltage at txoff for disabeling tx output power v tx,off 1.5 ? ? v ? voltage at txoff for enabeling tx output power v tx,on ??0.5v? txon/off switching time t on/off ??500ns? 1) performance based on application circuit figure 3 on pa ge 16, cross section of app lication board, compensation structures and application board layout figur e 5 on page 21ff and footprint figure 9 on page 24 2) guaranteed by device design 3) high lo buffer output power in ?high? mode otherwise typ. 4db reduced lo-output power table 6 typical characteristics t a = -40 .. 125 c, f = 24.0 .. 24.25 ghz, spi-bit 4 = high 1) (cont?d) parameter symbol values unit note / test condition min. typ. max.
BGT24ATR11 silicon germanium 24 ghz transceiver mmic electrical characteristics data sheet 14 revision 3.0, 2013-09-10 2.4.3 rx section table 7 typical characteristics t a = -40 .. 125 c, f = 24.0 .. 24.25 ghz, spi-bit 4 = high 1) 1) performance based on application circuit figure 3 on pa ge 16, cross section of app lication board, compensation structures and application board layout figur e 5 on page 21ff and footprint figure 9 on page 24 parameter symbol values unit note / test condition min. typ. max. rfin frequency range f rfin 24.0 ? 24.25 ghz ? rfin port impedance 2) 2) guaranteed by device design z rfin ? 22.9-j14.9 ? typical value at 24.125ghz and vswr 2:1 rfin vswr vswr ? ? 2:1 ? at load port of off- chip compensation network as pro- posed if frequency range f if 0?10mhz? if output impedance z if 850 1000 1150 ? leakage lo to rfin l lo=>rfin ? ? -30 dbm parameter based on ifx eval board design voltage conversion gain 3) 3) lowest gain at high temperatur e, highest gain at low temperature g c 19 26 31 db r load,if >10 k lna gain reduction g clg 358db? ssb noise figure n ssb ? 12 20 db single sideband at f if = 100 khz if 1/f corner frequency f c ?1020khz? input compression point ip 1db -17 -12 ? dbm ? input 3?rd order intercept point iip3 -8 -4 ? dbm ? quadrat. phase imbalance p -10 ? 10 deg ? quadrat. amplitude imbalance a -1 ? 1 db ?
BGT24ATR11 silicon germanium 24 ghz transceiver mmic electrical characteristics data sheet 15 revision 3.0, 2013-09-10 2.5 temperature sensor monitoring of the chip temperature is provided by t he on-chip temperature sensor which delivers temperature- proportional voltage to the temp output. the temp. s ensor can be independently biased through vcctemp. thereby the chip temperature can be monitored while the main supply of the transceiver is switched off. 2.6 power detector for rf output power indication, peak voltage detectors ar e connected to the output of the tx power amplifier and to the lo medium power amplifier. to eliminate temper ature and supply voltage variations, a reference output voltage v ref is available through the ana output for the tx and lo power sensor. the compensated detector output voltage is given by the difference between v out and v ref for both power sensors respectively. this voltage is proportional to the rf voltage swing at the individual amplifier outputs, its characteristic is non-directional. table 8 typical characteristics temperature sensor t a = -40 .. 125 c 1) 1) all voltages with respect to ground, positive curr ent flowing into pin (unless otherwise specified) parameter symbol values unit note / test condition min. typ. max. temperature range t tsens -40 ? 125 c ? output temperature voltage v out,temp ? 1.50 ? v @ 25c sensitivity s tsens ?4.5?mv/k? overall accuracy error e rr tsens ?? 15 k ? table 9 typical characteristics power detector t a =-40 .. 125c, v cc =3.3v 1) 1) all voltages with respect to ground, positive curr ent flowing into pin (unless otherwise specified) parameter symbol values unit note / test condition min. typ. max. power range p psens -10 ? 15 dbm ? tx power sensor output v out,tx - v ref,tx ?550?mv@ p tx = 11 dbm lo power sensor output v out,lo - v ref,lo ?50?mv@ p lo = 0 dbm
BGT24ATR11 silicon germanium 24 ghz transceiver mmic application circuit and block diagram data sheet 16 revision 3.0, 2013-09-10 3 application circuit and block diagram 3.1 application ci rcuit schematic figure 3 application circuit with chip outline (top view) table 10 bill of materials part number part type manufacturer size comment c1 ... c5 chip capacitor various various ? r1 ... r2 chip resistor various 0402 ? BGT24ATR11_appl_bid.vsd txoff ana vee txx tx vee si clk cs n.c. vcctemp temp q1 vee q1n q2 vee fine coarse vcc 3) rfin vee vee ifqx test pin 2) ifix ifi ifq vee 12 34 5 6 10 89 7 15 12 13 14 17 18 16 11 19 20 29 26 28 27 25 24 23 22 21 30 31 32 r1 1) 100 c1 1f c2 1) 1f r2 1) 100 c3 1) 1f 1) rc-time constants to be defined according to modulation requirements. 2) connect pin 15 and 16 3) galvanic connection of vcc pins on silicon 4) optional value: according to quality of supply voltage vcc 3) c4 1f c5 4) 470f test pin 2) lo
BGT24ATR11 silicon germanium 24 ghz transceiver mmic application circuit and block diagram data sheet 17 revision 3.0, 2013-09-10 3.2 pin description table 11 pin definition and function pin no. name function 1 q1n complementary prescaler output 1.5ghz 2 q2 prescaler output 23khz 3 vee ground 4 fine vco fine tuning input 5 coarse vco coarse tuning input 6 vcc supply voltage; total current divided equal on both vcc pins 7 rfin rf input downconverter 8 vee ground 9 vee ground 10 ifqx complementary quadrature phase if output downconverter 11 vee ground 12 ifq quadrature phase if output downconverter 13 ifi in phase if output downconverter 14 ifix complementary in phase if output downconverter 15 test pin test pin; dc coupled pin 16 test pin test pin; dc coupled pin 17 vcc supply voltage; total current divided equal on both vcc pins 18 cs chip select inpu t spi (inverted) 19 clk clock input spi interface 20 si data input spi interface 21 vee ground 22 tx transmit output 23 txx complementary transmit output 24 vee ground 25 ana analog output 26 txoff pulsable pin / please connec t to vee in case txoff function is controlled via spi 27 n.c. not connected 28 lo lo output 29 vcctemp temperature sensor supply voltage 30 temp temperature sensor output 31 q1 prescaler output 1.5ghz 32 vee ground
BGT24ATR11 silicon germanium 24 ghz transceiver mmic application circuit and block diagram data sheet 18 revision 3.0, 2013-09-10 3.3 spi 1.) three signals control the serial peripheral interface of the BGT24ATR11: si (data); clk (clock); cs (chip select) 2.) the data bits si (msb first) are read in the shift with falling edge of the clk signal. please make sure, that the data is present at least 10 ns before and at least 10 ns after the falling edge of the clock signal. 3.) the clk and cs signals are combined internally. at least 20 ns before first rising edge of the first clk signal cs needs to be in "low" state. while the data is read, cs has to remain in "low" state. 4.) when data read in is fi nished, the shift register content will be written in the latch at the ri sing edge of the cs signal. the time between the last falling edge of the clk signal and t he rising edge of the cs must be at least 20 ns. table 12 spi data bit description data bit name description (logic high) power on state 15 (msb) gs lna gain reduction low 14 ..13 ? not used low 12 dis_pa tx power disabled, in case txon/off function is controlled via txoff pin, this bit needs to be set in low state high 11 amux2 analog multiplexer control bit 2 high 10 test bit test bit, must be low otherwise malfunction low 9 test bit test bit, must be low otherwise malfunction low 8 amux1 analog multiplexer control bit 1 low 7 amux0 analog multiplexer control bit 0 low 6 dis_div64k disable 64k divider low 5 dis_div16 disable 16 divider low 4 pc2_buf high lo buffer output power in ?high? mode otherwise typ. 4db reduced lo-output power low 3 pc1_buf high tx buffer output power low 2 pc2_pa tx power reduction bit 2 high 1 pc1_pa tx power reduction bit 1 high 0 pc0_pa tx power reduction bit 0 high
BGT24ATR11 silicon germanium 24 ghz transceiver mmic application circuit and block diagram data sheet 19 revision 3.0, 2013-09-10 figure 4 timing diagram of the spi table 13 spi timing and logic levels parameter symbol values unit min. typ. max. serial clock frequency f sclk 0?50mhz serial clock high time f sclk(h) 10 ? ? ns serial clock low time t sclk(l) 10 ? ? ns chip select lead time t cs(lead) 20 ? ? ns chip select lag time t cs(lag) 20 ? ? ns data setup time t si(su) 10 ? ? ns data hold time t si(h) 10 ? ? ns low level (si, clk, cs ) v in(l) 0?0.8v high level (si, clk, cs ) v in(h) 2.0 ? v cc v input capacitance (si, clk, cs ) c in ??2pf input current (si, clk, cs ) i in -150 ? 150 a table 14 truth table amux output signal ana amux2 amux1 amux0 v out,tx low low low v ref,tx low low high v out,lo low high low v ref,lo low high high v temp high low low test_signal1 high low high BGT24ATR11_spi.vsd
BGT24ATR11 silicon germanium 24 ghz transceiver mmic application circuit and block diagram data sheet 20 revision 3.0, 2013-09-10 test_signal2 high high low test_signal2 high high high table 14 truth table amux (cont?d) output signal ana amux2 amux1 amux0
BGT24ATR11 silicon germanium 24 ghz transceiver mmic application circuit and block diagram data sheet 21 revision 3.0, 2013-09-10 3.4 application board and reflow profile figure 5 cross-section view of application board figure 6 detail of compensation structure (valid for appl. board mat. ro4350b, 0.254mm acc. to fig. 5) copper 35um blind-vias vias ro4350b, 0.254mm fr4, 0.5mm BGT24ATR11_cross_section_view.vsd fr4, 0.25mm BGT24ATR11_vqfn32-9-cs.vsd 0.30 0.55 1.80 0.85 0.50 single-ended rfin 0.30 0.55 1.65 1.10 single-ended lo 0.30 0.55 1.60 1.10 differential tx 0.50 0.50 all specified values in [mm]
BGT24ATR11 silicon germanium 24 ghz transceiver mmic application circuit and block diagram data sheet 22 revision 3.0, 2013-09-10 figure 7 application board layout note: in order to achieve the same performance as give n in this datasheet please follow the suggested pcb- layout. the compensation structure is critical for rf performance. via holes as recommended on one of next pages (not shown above). top layer (top view) BGT24ATR11_app_board_layout.vsd mid1 and bottom layer (top view) mid2 layer (top view)
BGT24ATR11 silicon germanium 24 ghz transceiver mmic application circuit and block diagram data sheet 23 revision 3.0, 2013-09-10 3.5 equivalent circuit diag ram of mmic interfaces figure 8 equivalent circuit diagram of mmic interfaces BGT24ATR11_esb.vsd q1, q1n vee vcc pin 1 , 31 q2 vee vcc pin 2 50 120 120 fine, coarse vee vcc pin 4 , 5 60k 300 rfin, tx, txx vee pin 7 , 22 , 23 ifx vee vcc pin 10 , 12 , 13 , 14 400 cs, clk, si vee vcc pin 18 , 19 , 20 54k ana vee vcc pin 25 1500 40 lo vee pin 28 temp vee vcc pin 30 1500 100 50 40 vee 100 20 vee txoff vee vcc pin 26 1.68k 6.25k 6.25k spi 30k tolerance of all resistors +/- 20%
BGT24ATR11 silicon germanium 24 ghz transceiver mmic physical characteristics data sheet 24 revision 3.0, 2013-09-10 4 physical characteristics 4.1 package footprint figure 9 recommended footprint and stencil layout for the vqfn32-9 package BGT24ATR11_vqfn32-9-fp.vsd 0.5 0.3 0.85 0.3 2.9 3.3 3.9 4.3 1.0 2.2 3.2 0.1 0.2 copper solder mask vias pastefree area 0.7 0.1 pin 1 all specified values in [mm]
BGT24ATR11 silicon germanium 24 ghz transceiver mmic physical characteristics data sheet 25 revision 3.0, 2013-09-10 4.2 reflow profile soldering process qualified during qualification with ?pre conditioning msl-3: 30c. 60%r.h., 192h, according to jedec jstd20?. figure 10 reflow profile for BGT24ATR11 (vqfn32-9) BGT24ATR11_reflow_profile.vsd reflow profile recommended by infineon technologies ag (based on ipc/jedec j-std-020c)
BGT24ATR11 silicon germanium 24 ghz transceiver mmic physical characteristics data sheet 26 revision 3.0, 2013-09-10 4.3 package dimensions figure 11 package outline (top, side and bottom view) of vqfn32-9 figure 12 marking layout vqfn32-9 BGT24ATR11_vqfn32-9-po.vsd all specified values in [mm] BGT24ATR11_vqfn32-9_ml.vsd
BGT24ATR11 silicon germanium 24 ghz transceiver mmic physical characteristics data sheet 27 revision 3.0, 2013-09-10 figure 13 tape of vqfn32-9 BGT24ATR11_vqfn32-9_ct.vsd all specified values in [mm]
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